microsemi carlsbad division 5973 avenida encinas #101, carlsbad, ca 92008, 760-431-5490 fax: 760-431-0541 microsemi company confidential information protected by non disclosure information page 1 copyright ? 2000 rev. 0.1a,2002-06-17 www. microsemi . com med427 high voltage half bridge target datasheet c arlsbad division description description description description the med427 offers a high voltage half bridge solution integrated as a module in a ball grid array package. the module is developed specifically for low speed and ultra low power applications where space and quiescent current is of primary concern. the two switches are independently controlled via low voltage compatible inputs controlled by lx1801 (ic1). the lower side igbt is driven from the lo_en input via a level shifter. the level shift to the gate drive of the high side igbt is performed by lx1802 (ic2). when the high side switch is enabled (hi_en asserted) ic2 is driven from the charged capacitor c2. important: for the most current data, consult microsemi ?s website: http://www.microsemi.com key features key features key features key features miniature size, multi chip module, mcm significant reduction component to existing ? bridge design convenient mounting, ball grid array, bga sn63/pb37 solder bumps 250na quiescent current maximum switch voltage 1000v maximum switching current 56a applications applications applications applications implantable cardioverter defibrillators low to medium speed applications with low duty cycle requiring small form factor product highlight product highlight product highlight product highlight module component ref module component ref module component ref module component reference erence erence erence component manufacturer part number/value ic1 microsemi mp lx1801 ic2 microsemi mp lx1802 r1 state of the art 0201 33k (5%) r2 state of the art 0201 680k (5%) c1 state of the art 0805n450j102nt 47pf (1000v) c2 state of the art 0603 100nf (50v) q1.q2 microsemi sa msaga11f120d d1 microsemi sa md427 d2 microsemi sa md427 m m e e d d 4 4 2 2 7 7 lx1801 lx1802
microsemi carlsbad division 5973 avenida encinas #101, carlsbad, ca 92008, 760-431-5490 fax: 760-431-0541 microsemi company confidential information protected by non disclosure information page 2 copyright ? 2000 rev. 0.1a,2002-06-17 www. microsemi . com med427 high voltage half bridge target datasheet c arlsbad division absolute maximum rat absolute maximum rat absolute maximum rat absolute maximum ratings ings ings ings igbt gate drive voltage, v ddhi ..................................................20v switch voltage, v dd800 ............................................................ 1000v positive power supply voltage, v ddlo ..........................-0.3 to 3.5v note: exceeding these ratings could cause damage to the device. all voltages are with respect to ground. currents are positive into, negative out of specified terminal. marking configuratio marking configuratio marking configuratio marking configuration n n n pin configuration pin configuration pin configuration pin configuration functional pin descr functional pin descr functional pin descr functional pin description iption iption iption pin name description vddhi igbt gate drive supply voltage vdd800 switch voltage vddlo logic supply voltage ground (vss) negative supply rail, return for low side switch enhi enable for high side switch, active high. note timing requirements enlo enable for low side switch lead switch output, high z if both lo_en and hi_en is low. p p a a c c k k a a g g e e d d a a t t a a
microsemi carlsbad division 5973 avenida encinas #101, carlsbad, ca 92008, 760-431-5490 fax: 760-431-0541 microsemi company confidential information protected by non disclosure information page 3 copyright ? 2000 rev. 0.1a,2002-06-17 www. microsemi . com med427 high voltage half bridge target datasheet c arlsbad division operating conditions operating conditions operating conditions operating conditions MED427-A1 parameter min typ max units igbt gate drive supply voltage v ddhi 15 18 v logic level supply, v ddlo 2.6 3.4 v ground, v ss 0 v operating temperature 31 43 c electrical character electrical character electrical character electrical characteristics istics istics istics unless otherwise specified, the following test conditions apply: v ddhi =16v,v dd800 =v ss =0v,r load =25 ohm to 0v MED427-A1 parameter symbol test conditions min typ max units quiescent current, pin v dd hi disabled i dd0(q) lo_en=0v,hi_en=0v 10 100 na quiescent current pin v dd800 i ddh0(q) vhv=800v,lo_en,hi_en=0v ua quiescent current pin v ddlo i ddlo(q) hi_en=0v,lo_en=0v 10 100 na operating current v dd , hi_en=1 i ddhi_en hi_en=3.6v,lo_en=0v 9 12 ua note 1 operating current v dd , lo_en=1 i ddl0_en hi_en=0v,lo_en=3.6v 10 100 na operating current v ddlo , hi_en=1 i dd1hi_en hi_en=3.6v,lo_en=0v ma operating current v ddlo lo_en=1 i dd1l0_en hi_en=0v,lo_en=3.6v 10 100 na output voltage rise time t out(r) vhv=800v 10%-90%, lo_en=0v,hi_en=0- >3.6v 5 usec output fall start t out(f1) vhv=800v,lo_en=0v,hi_en=3.6v->0v 5 usec output fall time t out(f2) vhv=800v, 90%-10%, lo_en=0v,hi_en=3.6v->0v 5 usec input low level vil pins lo_en, hi_en 0.3 v input high level vih pins lo_en, hi_en vddl o- 0.3v vddl o+0.3 v v quiescent current, pin v dd disabled i dd0(q) lo_en=0v,hi_en=0v 10 100 na note 1: normally the operating current is sourced from the internal bootstrap capacitor. this means that the high side can only be enabled a limited time. timing requirements timing requirements timing requirements timing requirements MED427-A1 parameter symbol test conditions min typ max units minimum en_hi hitolo to en_lo lotohi t d1 200 usec minimum en_lo hitolo to en_hi lotohi t d2 10 usec e e l l e e c c t t r r i i c c a a l l s s
microsemi carlsbad division 5973 avenida encinas #101, carlsbad, ca 92008, 760-431-5490 fax: 760-431-0541 microsemi company confidential information protected by non disclosure information page 4 copyright ? 2000 rev. 0.1a,2002-06-17 www. microsemi . com med427 high voltage half bridge target datasheet c arlsbad division application informat application informat application informat application information ion ion ion hv out1 med427 a en_hi1 en_lo1 out2 med427 a en_hi2 en_lo2 vdd vddlo vss (rl) figure 3 the figures above shows a typical full bridge application that uses two med427a together with a block diagram for the half brid ge. the en_hi?s and en_lo?s are normally controlled from a high voltage controller. a few notes about the operation of this configuration: 1. before asserting the high side (en_hi?s) any charge on the output of the bridge shall be allowed to ?bleed out?. in a full b ridge application this can also be achieved by discharging through the load and opposite lower side switch. 2. the bootstrap supply relies on that the output is close to vss before the high side is enabled. 3. the effective high side igbt gate voltage after en_hi1 is enabled in half bridge 1 is approximately vgate0= v(vdd)-v1-v2 where v1 is the voltage at out1 when en_hi1 is enabled and v2 is the voltage drop due charging the gate of q1. 4. after the high side is enabled ic2 is powered from the energy stored in c2, subsequently there is a limit on how long the hi gh side can be enabled. the high side igbt gate voltage versus time a can be expressed as vgate=vgate0-t*sr. where vgate0: initial gate voltage according to (3) above sr: typically 0.1v/msec t: time (in ms) after high side is enabled a a p p p p l l i i c c a a t t i i o o n n
microsemi carlsbad division 5973 avenida encinas #101, carlsbad, ca 92008, 760-431-5490 fax: 760-431-0541 microsemi company confidential information protected by non disclosure information page 5 copyright ? 2000 rev. 0.1a,2002-06-17 www. microsemi . com med427 high voltage half bridge target datasheet c arlsbad division notes notes notes notes n n o o t t e e s s
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